HTN7G09P200H(B)

HTN7G09P200H(B)

The HTN7G09P200H(B) from Watech Electronics is a RF Amplifier with Frequency 1.8 to 1000 MHz, Gain 18.39 to 23.24 dB, Output Power 48.92 to 53.01 dBm, Output Power 77.98 to 219.28 W, P1dB 48.92 to 53.41 dBm. Tags: Flanged, Power Amplifier. More details for HTN7G09P200H(B) can be seen below.

Suzhou Watech Electronic Technology Co., Ltd.

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Product Details

  • Part Number
    HTN7G09P200H(B)
  • Manufacturer
    Watech Electronics
  • Description
    LDMOS MMIC Amplifier from 1.8 to 1000 MHz

General Parameters

  • Type
    Power Amplifier
  • Configuration
    IC/MMIC/SMT
  • Application
    Medical, Scientific, Industrial, Mobile, Radio, Plasma Generator, Magnetic Resonance Imaging (MRI), Base Station, Aviation
  • Display Application
    Analog and Digital Broadcasting, Meteorological, Private Network Communication, Plasma Generation, Particle Accelerators, RF Ablation and Skin Treatment, Industrial Heating, Welding and Drying Systems
  • Standards Supported
    ISM Band
  • Industry Application
    Broadcast, Industrial, Aerospace & Defense, Radar
  • Frequency
    1.8 to 1000 MHz
  • Gain
    18.39 to 23.24 dB
  • Output Power
    48.92 to 53.01 dBm
  • Output Power
    77.98 to 219.28 W
  • P1dB 
    48.92 to 53.41 dBm
  • P1dB
    77.98 to 219.28 W
  • Saturated Power
    53.01 dBm
  • Saturated Power 
    200 W
  • PAE
    48.63 to 68.75%
  • Impedance
    50 Ohms
  • Pulsed/CW
    CW/Pulsed
  • Pulse Width
    100 uSec
  • Sub-Category
    Pulsed Amplifer
  • Supply Voltage
    20 to 28 V
  • Quiscent Current
    600 mA
  • Technology
    LDMOS
  • Package Type
    Flanged
  • Package
    4 Leads, 2 Mounting Holes
  • Storage Temperature
    -55 to 150 Degree C
  • RoHS
    Yes
  • Note
    P3 dB : 50.65 to 54.14 dBm

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